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研究电子辐照对发光二极管(Light emitting diode,LED)性能的影响。利用电子加速器提供的电子束模拟空间电子辐射环境,试验时电子的能量是1.0 MeV,辐射最大剂量为1×106rad(Si)。辐照期间,采用异位测试的方法进行光学量和电学量的测量,并进行辐射后退火效应的研究。结果表明:随着辐照剂量的增加,LED的输出光功率近似线性衰减,其正向压降V增大,且不同的试验条件对LED性能损伤的程度不同。此外,辐射停止后的一段时间,器件的性能有所恢复,并趋于稳定。同时利用电子辐照机理对试验结果进行理论分析和讨论。
The effect of electron irradiation on the performance of Light Emitting Diode (LED) was studied. Using the electron beam provided by the electron accelerator to simulate the space electron radiation environment, the experimental electron energy is 1.0 MeV and the maximum radiation dose is 1 × 106 rad (Si). During irradiation, the method of ectopic test was used to measure the amount of light and electricity, and the effect of post-irradiation annealing was studied. The results show that with the increase of irradiation dose, the output optical power of LED decreases linearly and its forward voltage drop V increases. Different experimental conditions have different degrees of damage on LED performance. In addition, the performance of the device has been restored and stabilized over a period of time after radiation has stopped. At the same time, the experimental results are analyzed and discussed by means of electron irradiation mechanism.