论文部分内容阅读
意法半导体的新系列功率MOSFET让电源设计人员实现产品效能最大化,同时提升工作稳健性和安全系数。MDmeshTM K5产品是世界首款兼备超结技术优点与1500V漏源(drain-to-source)击穿电压(breakdown voltage)的晶体管,并已赢得亚洲及欧美主要客户用于其重要设计中。ST推出世界首款1500V超结功率MOSFET,实现更环保、更安全的电源
STMicroelectronics’ new series of power MOSFETs allow power supply designers to maximize product performance while improving operational robustness and safety factor. The MDmeshTM K5 is the world’s first transistor that combines the benefits of superjunction technology with a drain-to-source breakdown voltage of 1500V and has won major customers in Asia and Europe and the United States for its critical designs. ST introduced the world’s first 1500V super junction power MOSFET to achieve a greener and safer power supply