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为研制具有沟道衬底的单模激光器,讨论了H_2SO_4-H_2O_2-H_2O对GaAs晶片的择优腐蚀。实验证明,使用H_2SO_4∶H_2O_2∶H_2O=1∶8∶8腐蚀液,在GaAs(100)面上沿[011]和[01(?)]方向开槽分别获得燕尾槽和V型槽衬底,满足了器件设计的要求。
In order to develop a single-mode laser with a channel substrate, the selective etching of GaAs wafers by H 2 SO 4 -H 2 O 2 -H 2 O was discussed. The experimental results show that the dovetail and V-groove substrates are obtained on the GaAs (100) surface by using the H 2 SO 4: H 2 O 2: H 2 O = 1: 8: 8 etching solution along [011] and [01 (?)] Meet the device design requirements.