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采用传输线模型测量了重B掺杂 p型金刚石薄膜 (约 10 2 0 cm-3 )上Ti/Au欧姆接触电阻率 ρc,测试了 5 0 0℃退火前后及大电流情况下的I V特性 ,研究了退火对 ρc 的影响 .结果表明 ,重掺杂和退火工艺是改善欧姆接触的有效手段 .ρc 随测试温度的变化表明金属 /半导体接触界面载流子输运机制为隧道穿透 .而光照对 ρc 影响的分析表明金刚石可作为理想窗口材料 .测试得到的最低 ρc 值约为 10 -4 Ωcm2 .
The Ti / Au ohmic contact resistivity ρc on a heavy B-doped p-type diamond thin film (about 10 2 0 cm-3) was measured by using a transmission line model. The IV characteristics before and after annealing at 500 ° C and large current were investigated. The effect of annealing on ρc is studied.The results show that heavy doping and annealing process are effective means to improve the ohmic contact.The change of pc with the test temperature indicates that the carrier transport mechanism at the metal / Analysis of the influence of ρc shows that diamond can be used as an ideal window material and the lowest ρc value obtained is about 10 -4 Ωcm 2.