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研究了一种适用于亚微米特大规模集成电路(ULSI)的封闭界面局部氧化隔离技术;作者把等离子增强化学汽相淀积工艺用于Si_3N_4/SiO_2/Si_3N_4复合结构的生产中;这种掩蔽结构,对垂直封闭以及在硅选择氧化期间通过掩模夹层边缘封闭氧化剂十分有效。为了在芯片制造过程中形成完全平坦的图形,生长了全开槽和半开槽的场氧化物。本文报道了一种适用于ULSI的无鸟喙LOCOS工艺。
A closed-interface local oxide isolation technique suitable for submicron ultra-large scale integrated circuits (ULSI) was studied. The author used plasma enhanced chemical vapor deposition in the production of Si_3N_4 / SiO_2 / Si_3N_4 composite structures. This masking structure , It is very effective for vertical sealing and blocking the oxidant through the edge of the mask interlayer during silicon selective oxidation. In order to form a completely flat pattern during chip fabrication, full-slot and half-slotted field oxide is grown. This article reports a LOCOS process for bird beak that is suitable for ULSI.