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A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper.The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one.Using pixel level sample-and-hold circuit,the KTC noise on FD node can be effectively cancelled by correlated double sampling operation.The in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size.A high speed 1000 fps 256×256 CMOS image sensor based on the pixel is implemented in 0.18μm CMOS process.The chip active area is 5 mm×7 mm with a pixel size of 14μm×14μm.The developed sensor achieves a read noise level as low as 14.8e-while attaining a high fill factor of 40%.The full well capacity can contain 30840e-and the resulting signal dynamic range is 66 dB.
A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this paper. The pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than one. Using pixel level sample- and-hold circuit, the KTC noise on FD node can be effectively canceled by correlated double sampling operation. in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size.A high speed 1000 fps 256 × 256 CMOS image sensor based on the pixel is implemented in 0.18 μm CMOS process.The chip active area is 5 mm × 7 mm with a pixel size of 14 μm × 14 μm.The developed sensor achieves a read noise level as low as 14.8e-while attaining a high fill factor of 40%. The full well capacity can contain 30840e-and the resulting signal dynamic range is 66 dB.