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宽带隙半导体材料一般认为禁带宽度【注】大于2.7电子伏(eV)的半导体材料称为宽禁带半导体材料,硅的禁带宽度为1.12eV,砷化镓为1.42eV,它们都不是宽禁带半导体材料;
Wide bandgap semiconductor materials are generally considered as forbidden bandwidths. Note: Semiconductor materials with greater than 2.7 eV are known as wide bandgap semiconductors, with a forbidden band width of 1.12eV for silicon and 1.42eV for gallium arsenide, neither of which is wide Forbidden band semiconductor material;