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利用石英闭管法对金属有机化学气相沉积(MOCVD)外延生长的应变量子阱(MQW)650 nm AlGaInP/GaInP材料进行选择区域扩Zn,使扩Zn区域的光致发光(PL)谱的峰值蓝移达175 meV,形成对650 nm波长激光器的高透腔面,有益于减少激光器腔面光吸收,增加了激光器退化的光学灾变损伤(COD)阈值.后工艺制作出条宽100μm,腔长1 mm的增益导引激光器,实现了红光半导体激光器的大功率输出.激光器阈值电流为382 mA,在2.28 A工作电流时达到光学灾变损伤阈值,最大连续输出光功率1.55 W,外微分量子效率达到0.82 W/A.
Quartz tube-closed method was used to expand Zn in the selective region of MQW 650 nm AlGaInP / GaInP epitaxial growth by metal organic chemical vapor deposition (MOCVD) to increase the peak blue (PL) of the photoluminescence (PL) Which can reduce the optical absorption of the laser cavity surface and increase the laser catastrophic optical catastrophic damage (COD) threshold.After the process to make a width of 100μm, cavity length 1 mm gain guided laser to realize the high power output of the red semiconductor laser.The threshold current of the laser is 382 mA which reaches the threshold value of optical catastrophe at the operating current of 2.28 A and the maximum continuous output optical power is 1.55 W. The external differential quantum efficiency 0.82 W / A.