论文部分内容阅读
Reduction of Deep Level Defects in Unintentionally Doped 4H-SiC Homo-epilayers by Ion Implantation
【机 构】
:
School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materia
【出 处】
:
武汉理工大学学报(材料科学版)(英文版)
【发表日期】
:
2012年3期
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