论文部分内容阅读
用射频磁控溅射技术制备出纳米GaSb颗粒镶嵌在SiO2 介质中的复合薄膜 .透射电子显微镜观察表明 ,纳米GaSb颗粒均匀地镶嵌在SiO2 介质中 .X射线衍射显示出GaSb ( 1 1 1 ) ,GaSb ( 2 2 0 )和GaSb ( 31 1 )典型的面心立方闪锌矿结构特征 .复合薄膜的室温光吸收谱表明 ,吸收边发生了较大的蓝移 ,并且 ,蓝移量随纳米GaSb的颗粒尺寸减小而增大 .复合薄膜的室温Raman光谱表明 :薄膜的Raman散射峰较块体材料的有较大的红移和宽化 .用量子限域理论和张应力效应对这些现象作了解释 .
The composite thin films with nano-GaSb particles embedded in SiO2 were prepared by radio-frequency magnetron sputtering. Transmission electron microscopy showed that the nano-GaSb particles were uniformly embedded in SiO2 media. X-ray diffraction showed that GaSb (1 1 1), GaSb (2 2 0) and GaSb (31 1). The room temperature optical absorption spectra of the composite films show that there is a large blue shift at the absorption edge, and the amount of blue shift with the increase of nano-GaSb The Raman spectra of the films show that the Raman scattering peak of the films is larger than that of the bulk materials.With the quantum confinement theory and the tensile stress effect, Explained.