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本人经过多次摸底试验,最后采用了先机械减薄后化学减薄的方法,制取了70～120μm的硅片,化学腐蚀液为HNO_3+HF+HAC的混合液。化学反应机理见化学方程式如下: 3Si+4HNO_3+18HF→3H_2SiF_6+4NO
After several thorough tests, I finally adopted a method of mechanical thinning and chemical thinning, and prepared 70 ~ 120μm silicon wafers. The chemical etching solution was a mixture of HNO 3 + HF + HAC. See the chemical reaction mechanism chemical equation is as follows: 3Si + 4HNO_3 + 18HF → 3H_2SiF_6 + 4NO