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通过作者最近建立的关于 GAT器件集电结耗尽层电位分布和电场分布的二维解析模型 ,定量研究了 GAT的基区穿通电压 VPI,并且解释了该器件实现高频率与高电压兼容的实验结果。
Based on the recent two-dimensional analytical model of the depletion layer potential distribution and electric field distribution of collector junctions in GAT devices, the author has quantitatively studied the base-region pass-through voltage VPI of GAT devices and explained the experiment of high frequency and high voltage compatibility of the devices result.