论文部分内容阅读
针对KDP晶体生长过程中常出现的SO24-,NO3-和Cl-杂质,采用传统法和快速法掺杂生长了一系列KDP晶体,研究了不同阴离子杂质掺杂对KDP晶体X和Z向的电导率的影响。结果表明,X向的电导率比Z向电导率高;未掺杂时,快速生长的KDP晶体比传统法生长的KDP晶体具有更高的电导率;SO42-的掺杂增大了晶体在两个方向的电导率,且随着掺杂浓度的增加,晶体的电导率也相应增大;NO3-和Cl-对KDP晶体的电导率影响不大。分析认为,快速生长的KDP晶体具有更高的缺陷浓度,从而增大了晶体的电导率;SO42-具有与PO34-结构的相似性,从而能够取代部分PO43-进入晶格,从而产生H+空位。H+空位的定向移动能增大晶体的电导率。而NO3-和Cl-与PO34-结构差异较大,很难取代进入PO34-晶格,因此NO3-和Cl-对KDP晶体的电导率影响不大。
A series of KDP crystals were grown by traditional method and rapid method for the SO42-, NO3- and Cl- impurities that often appear in the growth of KDP crystals. The effects of different anions on the X and Z conductivity of KDP crystals were studied. Impact. The results show that the conductivity in the X direction is higher than that in the Z direction. When undoped, the rapidly growing KDP crystals have higher conductivity than the KDP crystals grown by the conventional method. The doping of SO42- And the conductivity of the crystal increases with the increase of doping concentration. NO3- and Cl- have little effect on the conductivity of KDP crystal. It is considered that rapidly growing KDP crystals have higher defect concentration and thus increase the crystal conductivity. SO42- has the similarities to PO34- structure, so it can replace part of PO43- into the crystal lattice to generate H + vacancies. The directional movement of H + vacancies increases the electrical conductivity of the crystal. However, NO3-, Cl- and PO34- have different structures and are difficult to replace into the PO34- lattice. Therefore, NO3- and Cl- have little effect on the conductivity of KDP crystals.