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运用XPS和AES研究了PZT薄膜／Si在热处理过程中的薄膜及界面化学反应：在热处理过程中，气氛中的氧气通过PZT的缺陷通道扩散到PZT／Si界面上，并与界面上的硅发生氧化反应形成SiO2界面层。同时基底上的硅通过PZT的缺陷扩散到样品表面形成SiO2表面层。此外，在PZT／Si界面上，Ti的氧化物和Si发生还原反应，形成了TISix金属硅化物，并残留在PZT膜层和SiO2界面层中。在PZT膜层内，有机结碳和钛的氧化物发生还原反应形成了TiCx物种，并存在于PZT膜层中。
The films and interfacial chemical reactions of PZT thin films / Si during heat treatment were studied by XPS and AES. During the heat treatment, the oxygen in the atmosphere diffused to the PZT / Si interface through the defect channel of PZT and interacted with the silicon on the interface The oxidation reaction forms a SiO2 interface layer. At the same time, the silicon on the substrate diffuses to the sample surface through the defects of PZT to form the SiO2 surface layer. In addition, at the PZT / Si interface, the Ti oxide and Si undergo a reduction reaction to form a TISix metal silicide and remain in the PZT film and the SiO2 interfacial layer. In the PZT film, the organic carbon and the titanium oxides undergo reductive reactions to form TiCx species and exist in the PZT film.