采用超声雾化喷涂法沉积得到 Sn O2 薄膜和掺氟离子 Sn O2 薄膜。通过改变掺杂量和选择合适的工艺条件可控制掺氟 Sn O2 薄膜的方块电阻 ,其最小方块电阻值达 10 Ω/□。用 5 5 0 nm单色光测得其透过率为 85 %— 90 %。用 X射线衍射仪及扫描电子显微镜分析 Sn O2 薄膜的微结构和成份 ,薄膜为择优取向晶化。薄膜具有很好的抗腐蚀性能。在已完成 pn结及电极制作工序的单晶硅太阳电池上沉积一层厚 70 nm的未掺杂 Sn O2 薄膜 ,构成光学减反射层 ,其电池的短路电流 Isc提高约 5 %— 10 %。 SnO2 thin films and fluorine-doped SnO2 thin films were deposited by ultrasonic spray-coating. By changing the doping amount and selecting the appropriate process conditions, the sheet resistance of SnO2 films can be controlled with a minimum sheet resistance of 10 Ω / □. The transmittance at 855 nm monochromatic light is 85% -90%. The microstructure and composition of SnO2 thin films were analyzed by X-ray diffractometer and scanning electron microscope. The films were crystallized in the preferred orientation. The film has good corrosion resistance. A thin layer of 70 nm undoped SnO2 thin film was deposited on the monocrystalline silicon solar cell with pn junction and electrode fabrication process to form an optical antireflection layer. The short-circuit current Isc of the cell was improved by about 5% -10%.