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通过在掺杂缺陷层的异质双周期光子晶体的表面添加一层具有Voigt效应的磁光半导体层,使该光子晶体结构的缺陷模透过率对外磁场产生响应。首先研究磁光半导体层的介电常数(折射率)随外磁场的变化规律,进而利用传输矩阵法研究该结构缺陷模的透射率随外磁场的变化规律。研究结果表明:在选取合适的材料参数和结构参数条件下,可实现缺陷模透射率与磁场的相关性,获得受磁场调控的缺陷模透射率,从而该结构可以应用于窄带滤波器的磁控开关。
By adding a layer of magneto-optic semiconductor layer with Voigt effect to the surface of a heterogeneous double-periodic photonic crystal doped with a defect layer, the defect mode transmittance of the photonic crystal structure responds to the external magnetic field. Firstly, the variation of dielectric constant (refractive index) of the magneto-optic semiconductor layer with the external magnetic field was studied. Then the transmission matrix method was used to study the variation of the transmittance with the external magnetic field. The results show that the dependence of the transmissivity of the defect mode on the magnetic field can be achieved by selecting the appropriate material parameters and structural parameters, and the defect mode transmissivity controlled by the magnetic field can be obtained. Therefore, the structure can be applied to the magnetron switch.