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以SiO2和聚苯乙烯(polystyrene,PS)微球为内核,采用液相沉淀工艺制备了具有包覆结构的CeO2/SiO2和CeO2/PS复合颗粒。利用X射线衍射仪、透射电子显微镜、场发射扫描电子显微镜、X射线光电子能谱仪、动态光散射仪和zata电位测定等手段对所制备样品进行了表征。将所制备的CeO2/SiO2和CeO2/PS复合颗粒用于硅晶片热氧化层的化学机械抛光,用原子力显微镜(atomic force microscope,AFM)观察抛光表面的微观形貌、测量表面粗糙度。结果表明:所制备的CeO2/SiO2和CeO2/PS复合颗粒呈球形,粒径在150～200nm,CeO2纳米颗粒在SiO2和PS微球内核表面包覆均匀。包覆的CeO2颗粒与SiO2内核之间形成了化学键结合。CeO2颗粒的包覆显著的改变了复合颗粒的表面电性。AFM测量结果表明:经CeO2/SiO2和CeO2/PS复合磨料抛光后的硅热氧化片表面在5μm×5μm范围内粗糙度值分别为0.292nm和0.180nm。
SiO2 and polystyrene (PS) microspheres were used as core to prepare CeO2 / SiO2 and CeO2 / PS composite particles with liquid crystal deposition. The prepared samples were characterized by X-ray diffraction, transmission electron microscopy, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, dynamic light scattering and zata potential measurement. The prepared CeO2 / SiO2 and CeO2 / PS composite particles were used for the chemical mechanical polishing of the thermal oxide layer of the silicon wafer, the microscopic morphology of the polished surface was observed with an atomic force microscope (AFM), and the surface roughness was measured. The results show that the prepared CeO2 / SiO2 and CeO2 / PS composite particles are spherical and the particle size is between 150 and 200 nm. CeO2 nanoparticles are uniformly coated on the inner surface of SiO2 and PS microspheres. The coated CeO2 particles form a chemical bond with the SiO2 core. The coating of CeO2 particles significantly changed the surface electrical properties of the composite particles. The results of AFM show that the surface roughness of silicon thermal oxide after polishing with CeO2 / SiO2 and CeO2 / PS composite abrasive is 0.292nm and 0.180nm respectively in the range of 5μm × 5μm.