论文部分内容阅读
结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3μm量子点VCSEL结构.
Combined with the principle of VCSEL and the quantum dot gain characteristics, the material gain and 3dB bandwidth of quantum dot VCSEL in p-doped active layer are calculated, and it is found that the p-doped structure can greatly improve the frequency characteristics.With VCSEL excitations The requirement of VCSEL structure was analyzed, the influence of distribution parameters on frequency characteristics was analyzed, and the requirement of external packaging was also proposed.The 1.3μm QD VCSEL structure with oxidation limiting layer with high frequency response was designed.