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Few-layered gallium selenide (GaSe) is obtained by using the mechanical exfoliation method,and its properties are characterized by photoluminescence and Raman spectroscopy.The pressure-dependent phonon scatterings of bulk,few-layered,oxidized few-layered GaSe are characterized up to 30 GPa by using a diamond anvil cell with inert argon used as the pressure transmission medium.All the GaSe samples processed a phase transition around 28GPa.A new vibration mode at 250cm-1 is found in oxidized few-layered GaSe by Raman spectra,which is indexed as the Raman vibration mode of α-Se.