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利用椭圆偏振仪 (EL)、傅里叶红外光谱 (FTIR)研究了 Si1 - x- y Gex Cy 合金分别在 90 0℃和 10 0 0℃干氧气氛下形成氧化物的生长动力学 .结果表明 :在 90 0℃氧化时 ,随着合金中的替代碳含量的增加 ,氧化速率逐渐下降 ;而在 10 0 0℃下氧化超过 10 min后 ,Si1 - x- y Gex Cy 合金的氧化基本上与碳的含量无关 ,与 Si1 - x Gex 的行为一致 .这主要是由于在 10 0 0℃比较长时间的氧化过程中 ,替代位的碳逐渐析出形成 β- Si C沉淀 ,失去了对氧化过程的影响作用 .研究表明对于 Si1 - x- y Gex Cy 薄膜和器件的应用来说 ,氧化的温度必须要小于 10 0 0℃ .
The growth kinetics of Si1-x-y Gex Cy alloy at 90 0 ℃ and 10 0 ℃ dry oxygen atmosphere was investigated by ellipsometer (EL) and Fourier transform infrared spectroscopy (FTIR) : The oxidation rate decreases with the increase of the substitutional carbon content in the alloy at 90 0 ℃, whereas the oxidation rate of the Si1 - x - y Gex Cy alloy after oxidation at 100 ℃ for 10 min is almost the same as Carbon content, which is consistent with the behavior of Si1 - x Gex, which is mainly due to the gradual precipitation of β - Si C precipitates from the substituted sites during the oxidation at 100 ℃ for a long time, It has been shown that the oxidation temperature must be less than 100 ° C for the Si1-x-y Gex Cy thin-film and device applications.