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提出了一种铜靶刻蚀形貌模拟方法,基于靶材溅射率与靶材表面磁场水平分量成正比的假设,以美国应用材料公司的小行星PVD磁控溅射装置为算例,实现了复杂运动轨迹铜靶刻蚀形貌的模拟,仿真计算结果与实际设备中铜靶刻蚀形貌有较好的一致性,为通过磁场分布研究靶材刻蚀形貌提供了一种理论方法。
Based on the hypothesis that the target sputtering rate is proportional to the horizontal component of the magnetic field on the target surface, an asteroid PVD magnetron sputtering device from Applied Materials Company is taken as an example to realize the etching simulation of copper target. The simulation of copper target etching morphology of complex motion trajectory is simulated. The simulation results are in good agreement with the copper target etching morphology in practical equipment, which provides a theoretical method for studying the etching morphology of target by magnetic field distribution .