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用慢正电子技术研究了在溅射时不加偏压 ,衬底加热 30 0℃ ,纯Ar气氛下制备的用Y2 O3 稳定的ZrO2 薄膜材料 (简称YSZ薄膜 ) ,发现了YSZ薄膜在不同深度处的缺陷分布情况 ,退火温度对YSZ薄膜缺陷有影响 .简要讨论了致密、优质YSZ薄膜的制备方法 .
YSZ thin films were deposited on pure Y 2 O 3 substrates with a bias voltage of 30 V at a uniform sputtering temperature (YSZ thin film). The YSZ thin films were deposited at different depths And the annealing temperature has an impact on the defect of YSZ film.The preparation method of dense and high quality YSZ film is briefly discussed.