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依据增益导波垂直谐振腔顶面发射半导体激光器热区特点与室温连续波运行条件建立了一个优化的全解析热模型,对AlInGaAs/AlGaAs垂直谐振腔激光器的横向温度效应进行了详细的解析计算分析,其完全的解析表达展示了更加清晰的横向热场物理图像,对于器件内部热场变化规律的理论预期与实验结果完全符合.该解析模型及其结果对于研究热稳态下的垂直谐振腔激光器热动力学特性,优化器件结构和控制激光器的阈值电流与功率温度饱和效应,特别是二维面阵器件中的横向热叠加效应提供了一个有用的工具.
Based on the characteristics of the hot zone of the top-emitting semiconductor laser at the top of the guided-wave vertical waveguide and the continuous-wave operating conditions at room temperature, an optimal thermal analysis model is established to analyze and calculate the lateral temperature effect of AlInGaAs / AlGaAs vertical cavity laser , And its complete analytic expression shows a more clear lateral thermal field physical image, and the theoretical expectation of the variation of thermal field inside the device fully accords with the experimental results. The analytical model and its results are very useful for the study of the thermo-stable vertical cavity laser Thermodynamic properties, device structure optimization and control of laser threshold current and power temperature saturation effects, especially in 2D planar array devices provide a useful tool for lateral thermal effects.