论文部分内容阅读
Total ionizing dose and synergistic effects of magnetoresistive random-access memory
【机 构】
：
KeyLaboratoryofFunctionalMaterialsandDevicesforSpecialEnvironments,XinjiangKeyLaboratoryofElectronic
【出 处】
：
核技术：英文版
【发表日期】
：
2018年8期
【基金项目】
：
supported by the National Natural Science Foundation of China（No.11705276）, the West Light Foundation of the Chinese Academy of Sciences（No.CAS-LWC-2017-2）
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