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以Cd(NO3)2·4H2O,Na2Se O3和Na2Te O3的混合液为电解液,采用电化学共沉积法在氧化铟锡(ITO)玻璃基底上制备了CdSexTey薄膜样品。探讨了沉积电压、水浴温度、沉积时间以及Cd,Te和Se物质的量比等制备条件对样品在模拟太阳光下的开路电压的影响。结果表明,在沉积电压为3.0 V,水浴温度为50℃,沉积时间为30 min,n(Cd)∶n(Te)∶n(Se)=5.6∶1∶1时制备的CdSexTey薄膜具有较高的开路电压,其值可达到0.464 1 V。X射线衍射(XRD)分析结果显示,CdSexTey样品中含单质态Se,CdSexTey的3个主要衍射峰对应的晶粒尺寸分别为43.07,44.56和44.03 nm。能谱分析(EDS)结果显示,样品中Cd,Te,Se元素的质量分数分别是6.53%,6.25%和14.52%,原子数分数分别为1.68%,1.42%和5.32%。对Cd元素原子数分数进行归一化处理,则样品CdSexTey中x为3.17(其中有化合态Se2-为0.15,单质态Se为3.02),y为0.85。
CdSexTey thin films were prepared on indium tin oxide (ITO) glass substrates by electrochemical coprecipitation using a mixture of Cd (NO3) 2.4H2O, Na2SeO3 and Na2TeO3 as electrolyte. The effects of preparation conditions, such as deposition voltage, bath temperature, deposition time and the ratio of Cd, Te and Se on the open circuit voltage of the samples under simulated sunlight were discussed. The results show that the CdSexTey films prepared at n (Cd): n (Te): n (Se) = 5.6:1:1 have higher deposition voltage of 3.0 V, water bath temperature of 50 ℃ and deposition time of 30 min Open circuit voltage, the value of up to 0.464 1V. The results of X-ray diffraction (XRD) analysis showed that the grain sizes of the three main diffraction peaks of Cd and CdSexTey in CdSexTey samples were 43.07, 44.56 and 44.03 nm, respectively. EDS results showed that the mass fraction of Cd, Te and Se in the samples were 6.53%, 6.25% and 14.52% respectively, and the atomic fractions were 1.68%, 1.42% and 5.32% respectively. In the CdSexTey sample, the average atomic fraction of Cd is normalized to 3.17 (where Se2- is 0.15, and Se is 3.02), and y is 0.85.