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准确地提取RF-LDMOS小信号模型参数对LDMOS大信号模型建模十分重要,而且好的小信号模型能很好地反映微波器件的性能。针对LDMOS提出了一种改进的小信号模型参数提取方法,此方法增加了测试结构的建模和参数提取,极大地方便了S参数曲线的拟合,而且对于测试版图的研究有一定的指导意义。由此方法提取的小信号模型与实验测试数据在0.1～8 GHz拟合的很好,并且准确地预测了器件的特征频率。该模型和方法能够很好的适用于LDMOS的L,S波段小信号建模和参数提取。
Accurately extracting the parameters of RF-LDMOS small signal model is very important for the modeling of LDMOS large signal model, and good small signal model can well reflect the performance of microwave device. Aiming at LDMOS, an improved small-signal model parameter extraction method is proposed. This method increases the modeling and parameter extraction of the test structure, which greatly facilitates the fitting of the S-parameter curve, and has certain guiding significance for the study of the test pattern . The small signal model extracted by this method fits well with the experimental test data at 0.1 ~ 8 GHz, and accurately predicts the characteristic frequency of the device. The model and method can be well applied to L, S band small signal modeling and parameter extraction of LDMOS.