采用硅离子注入改进SIMOX埋氧的抗总剂量辐射性能研究

来源 :高能物理与核物理 | 被引量 : 0次 | 上传用户:cqy2002
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采用硅离子注入工艺对注氧隔离(SIMOX)的绝缘体上硅(SOI)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅NMOS/SOI晶体管,并对其进行60Coγ射线总剂量辐照试验.通过背栅的Ⅰ-Ⅴ特性表征晶体管的总剂量辐照特性.结果表明,在埋氧层注硅可以降低NMOS/SOI受辐照引起的背栅阈值电压漂移,提高埋氧层的抗总剂量能力.
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