GaN和p型GaN薄膜中声子模和缺陷模的变温喇曼散射

来源 :半导体学报 | 被引量 : 0次 | 上传用户：shangwenqian

【摘要】

：

研究了MOCVD生长的GaN及掺Mg GaN薄膜从78到578K下的喇曼散射谱.在GaN和掺Mg GaN的谱中都观察到一个位于247cm-1的峰,此峰被认为是缺陷诱导的散射峰,而非电子散射和Mg的局域

【作者】

：

王瑞敏陈光德 LIN J Y Jang H X

【机构】

：

西安交通大学理学院,Department of Physics

【出处】

：

半导体学报

【发表日期】

：

2004年期

【关键词】

：

GaN p型GaN 喇曼散射缺陷模 GaN p-type GaN Raman scattering defect modes

【基金项目】

：

国家自然科学基金;

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研究了MOCVD生长的GaN及掺Mg GaN薄膜从78到578K下的喇曼散射谱.在GaN和掺Mg GaN的谱中都观察到一个位于247cm-1的峰,此峰被认为是缺陷诱导的散射峰,而非电子散射和Mg的局域模.同时讨论了两个谱中E2和A1(LO)声子峰的频率和线形.在掺Mg GaN样品中观察到应力松弛现象.

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GaN和p型GaN薄膜中声子模和缺陷模的变温喇曼散射

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