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ZnO是一种宽禁带半导体材料(3.37eV),具有较高的激子结合能(60meV),室温下激子仍然存在。由于其结构特点及优异的光电性能,ZnO在微电子学、光电子学、集成光学和微电子机械系统等高技术领域有着广阔的应用前景,在国内外引起极大的关注。但本征的ZnO呈n型电导,p型ZnO的获得因较强的自补偿效应,存在较大困难,限制了其应用水平。针对ZnO目前的研究、就其本征缺陷、p型掺杂以及新型功能器件等方面做一简要评述。
ZnO is a wide-bandgap semiconductor material (3.37eV) with a high exciton binding energy (60meV) and excitons are still present at room temperature. Due to its structural characteristics and excellent optoelectronic properties, ZnO has broad application prospects in the fields of high-tech such as microelectronics, optoelectronics, integrated optics and microelectromechanical systems and has aroused great attention at home and abroad. However, the intrinsic ZnO is n-type conductivity. Due to the strong self-compensation effect, the p-type ZnO has great difficulties and limits its application level. According to the current research of ZnO, a brief review is made on its intrinsic defects, p-type doping and new functional devices.