Flux-to-voltage characteristic simulation of superconducting nanowire interference device

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Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices,we propose a superconducting nanowire interference device in this study,which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor.A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device.The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility.Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.
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