采用电化学法及原电池法制备了多孔硅样品.通过在阳极氧化反应中HF溶液浓度、电流密度和反应时间的不同来控制多孔硅的孔隙率和膜厚.实验结果表明:不同电流密度下制备的多孔硅样品,孔隙度有相同的变化趋势,刚开始增加,然后减少;多孔硅的生长速度随电流密度的增加而升高.在多孔硅样品表面封装BST热释电敏感元件进行性能测试,结果表明多孔硅绝热性能与微桥结构接近. Porous silicon samples were prepared by electrochemical method and galvanic cell method.The porosity and thickness of porous silicon were controlled by the concentration of HF solution, current density and reaction time in the anodic oxidation reaction.The experimental results show that under different current densities Porous silicon samples prepared by the same trend, the porosity just beginning to increase, and then decrease; the growth rate of porous silicon increases with the increase of current density.Porous pyrogen sensors on the surface of porous silicon samples for performance testing The results show that the thermal insulation performance of porous silicon is close to that of the micro-bridge.