美国依利诺斯大学和通用电气公司的科学家们,已研制出并验证了目前世界上响应速度最快的晶体管。在晶体管的砷镓铟和砷镓铝构成的一个层状结构中,嵌有一个0.25微米长的选通电路或开关。当用60兆赫进行试验时,该器件具有预计的230兆赫的最大操作频率,该频率是与响应速度密切相关的。它的低噪声特性使它能探测到任何其他晶体管无法探测到的微弱信号,因此,它适用于军用和民用通信领域。1985年,依利诺斯大学的研究组试验过一种 Scientists at the University of Illinois and General Electric Corp. have developed and validated the world’s fastest-responding transistors. In a layered structure of arsenic indium gallium arsenide and gallium arsenide transistors, a 0.25 micron long gating circuit or switch is embedded. When tested at 60 MHz, the device has an estimated maximum operating frequency of 230 MHz, which is closely related to the response speed. Its low-noise characteristics allow it to detect weak signals that no other transistor can detect, making it suitable for military and civilian communications. In 1985, Illinois University’s research team tested one