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在CST Particle Studio环境下建立了长径比为40的铅玻璃MCP的三维结构,将有限积分法与蒙特卡罗方法相结合,模拟了直流和高斯脉冲偏置下微通道内二次电子倍增过程,得到了通道轴向二次电子云密度的动态分布曲线。结果显示,二次电子云在通道轴向成高斯分布;在直流偏置下电子云在漂移过程中密度逐渐增大,分布逐渐变得集中,当电子云漂移至靠近输出电极位置时密度达到最大;在高斯偏置下,脉宽对电子倍增过程有决定性影响,当脉宽大于二次电子平均渡越时间时,倍增过程与直流偏置相似。
In the CST Particle Studio environment, the 3D structure of lead glass MCP with an aspect ratio of 40 was established. The finite integral method was combined with the Monte Carlo method to simulate the secondary electron multiplication in the microchannels under DC and Gaussian pulse bias , The dynamic distribution curve of axial secondary electron cloud density was obtained. The results show that the secondary electron cloud has a Gaussian distribution in the axial direction of the channel. Under DC bias, the density of the electron cloud gradually increases during the drift, and the distribution gradually becomes concentrated. When the electron cloud drifts to near the output electrode, the density reaches the maximum The pulse width has a decisive influence on the electron multiplication process under the Gaussian bias. When the pulse width is larger than the average transit time of the secondary electron, the doubling process is similar to that of the DC bias.