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SiC作为一种宽禁带半导体材料,在高温、高压和大功率应用领域具有巨大的应用潜力。首先对4H-SiC的材料性能、外延生长模式、掺杂浓度控制及外延缺陷进行简单介绍。其次,从产业化的角度重点对4H-SiC的浓度和缺陷进行研究,并提供一些最新的工艺技术和外延结果:外延掺杂浓度一致良好;致命缺陷的密度总和低于0.5个/cm~2。这些介绍有利于增强人们对4H-SiC外延生长的认识和了解。
As a kind of wide band gap semiconductor material, SiC has great potential in high temperature, high voltage and high power applications. First, 4H-SiC material properties, epitaxial growth mode, doping concentration control and epitaxial defects are briefly introduced. Secondly, focusing on the industrialization, the concentration and defects of 4H-SiC are studied, and some latest technology and epitaxial results are provided: the epitaxial doping concentration is consistent and the density of fatal defects is less than 0.5 / cm 2 . These introductions will help enhance the understanding and understanding of 4H-SiC epitaxial growth.