本文叙述一种新型的压力传感器——多晶硅压阻式压力传感器。这种传感器以单晶硅为衬底材料,多晶硅电阻条构成惠斯通桥路,二者之间用介质隔离。器件的背面通过对单晶硅的腐蚀制成应力腔。与单晶硅器件相比,这种器件最突出的优点是不用pn结隔离,因而可把工作温限由130℃提高到200℃。通过对多晶硅生长条件及掺杂的控制,可望得到温度系数近似为零的器件。初步实验证明,多晶硅压阻式压力传感器很有应用前景。 This article describes a new type of pressure sensor - polysilicon piezoresistive pressure sensor. This sensor to monocrystalline silicon substrate material, polysilicon resistors constitute Wheatstone bridge between the two media isolation. The back of the device is made stress-tight by etching single-crystal silicon. Compared with the single crystal silicon device, the most prominent advantage of this device is not pn junction isolation, which can work temperature limit raised from 130 ℃ to 200 ℃. Through the control of polysilicon growth conditions and doping, it is expected to obtain a device with a temperature coefficient of approximately zero. Preliminary experiments show that polysilicon piezoresistive pressure sensor is very promising.