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当前,硅工艺日趋成熟,在材料研究上,今后将主要以化合物半导体为目标了。去年秋天,关于化合物半导体,在欧洲曾开了几次国际会议,下面根据会议的情况介绍一下最近的研究动向。 10月5日～7日在两德的阿亨大学召开了第三次GaAs和有关化合物半导体的国际会议。会议共分五个部分:气相外延生长、液相外延生长、微波器件(电子转移振荡器)、光电子学及器件、其他器件。在材料方面,虽然对进一步提高GaAs的高纯度均匀性上曾做过一些努力,但目前研究的主要对象是InP、GaP等磷化物和Al_xGa_(1-x)As、Ga_(1-x)In_xAs、InAs_(1-x)P_x等三元化合物半导体。
At present, the silicon technology is maturing. In materials research, it will mainly target compound semiconductors in the future. Last fall, on compound semiconductors, several international conferences were held in Europe. Here we introduce recent research trends based on the conference. The third international symposium on GaAs and related compound semiconductors was held at the University of Achengde in Germany and Germany from October 5 to 7. The conference is divided into five parts: the growth of vapor phase epitaxy, liquid phase epitaxy, microwave devices (electron transfer oscillator), optoelectronics and devices, other devices. Although some efforts have been made to further improve the high-purity uniformity of GaAs, the main targets of current research are phosphides such as InP, GaP and Al_xGa_ (1-x) As and Ga_ (1-x) In_xAs , InAs_ (1-x) P_x and other ternary compound semiconductors.