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采用完全对称的双链路功率合成架构,设计了一种应用于北斗手持式终端的高输出功率的功率放大器。采用F类输出匹配网络和自适应偏置电路,使得该功率放大器获得较高的功率附加效率和较好的谐波抑制性能。电路采用InGaP/GaAs HBT工艺流片,并通过搭载基板实现了集成化芯片的研制。芯片测试结果表明,该功率放大器的小信号增益为30dB,1dB压缩点为37dBm,饱和输出功率为38dBm,功率附加效率为45%,具有较好的谐波抑制性能。
Using a fully symmetrical dual-link power synthesis architecture, a high-output power amplifier designed for the Beidou handheld terminal is designed. The F type output matching network and adaptive bias circuit are adopted to make the power amplifier obtain higher power added efficiency and better harmonic suppression performance. The circuit uses InGaP / GaAs HBT process flow chip, and through the substrate to achieve the integrated chip development. The chip test results show that the small signal gain of the power amplifier is 30dB, the 1dB compression point is 37dBm, the saturation output power is 38dBm and the power additional efficiency is 45%, which has good harmonic suppression performance.