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微波功率GaAsMESFET的结构是在半绝缘砷化镓衬底上外延生长n型薄层砷化镓,然后在其上做源、漏欧姆接触和肖特基势垒栅.我们通过管芯侧面和背面金属化实现了大面积源接地.器件对管芯焊接工艺的基本要求是:(1)低温焊接;(2)导电导热性能良好;(3)可靠性高;(4)成品率高等等.我们曾经试用工艺比较成熟的银浆烧结(烧结温度是370℃),但是发现部分管芯特性变坏和焊接不牢、热阻大、串联电阻大以及工艺重复性差等问题.经过分析,我们认为高的导热率和高的电导率是
The microwave power GaAsMESFET is constructed by epitaxially growing an n-type thin gallium arsenide on a semi-insulating gallium arsenide substrate and then performing source and drain ohmic contact and Schottky barrier gates. We pass the die side and backside Metallization of a large area of the source to achieve the ground. The device of the die-bonding process of the basic requirements are: (1) low-temperature welding; (2) conductive thermal performance is good; (3) high reliability; (4) Once the trial process is relatively mature silver paste sintering (sintering temperature is 370 ℃), but found that some of the deterioration of the core characteristics and welding is not strong, large thermal resistance, large series resistance and poor process repeatability and other issues.After analysis, we believe that high The thermal conductivity and high conductivity are