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以Sn和SnO为源材料,化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件,实现了SnO2一维纳米结构的控制生长,成功获得各种不同横向尺度的SnO2纳米线、纳米带以及直径连续变化的针状纳米结构.通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征,认为高温生长点附近锡与氧的相对含量是控制SnO2一维纳米结构生长的关键因素;并在此基础上对SnO2一维纳米结构的生长机理进行了深入的讨论.
Sn and SnO as the source material, chemical vapor deposition method by controlling the ratio of reactants and oxygen content in the carrier gas and other macro-experimental conditions to achieve a controlled growth of SnO2 one-dimensional nanostructures, successfully obtained a variety of different lateral scale SnO2 nanowires, nanoribbons and continuously changing diameter needle-like nanostructures.The morphologies and lattice structures of samples prepared under different experimental conditions were characterized by scanning electron microscopy and X-ray diffractometer.The results show that the Sn and The relative content of oxygen is the key factor to control the growth of SnO2 one-dimensional nanostructures. On this basis, the growth mechanism of SnO2 one-dimensional nanostructures is discussed in depth.