基于离子注入隔离的微缩化发光二极管阵列性能

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基于F离子注入隔离技术实现一种新型微缩化发光二极管(micromicro-LED)阵列器件,并系统研究注入能量及发光孔径对micro-LED阵列器光电性能的影响.研究结果表明:相比于F离子50 keV单次注入器件,50/100 keV两次注入器件具有更好的光电性能,器件反向漏电降低8.4倍,光输出功率密度提升1.3倍.同时,在不同的发光孔径(6,8,10μm)条件下,器件反向漏电流均为3.4×10-8 A,但正向工作电压随孔径增大而减小,分别为3.3,3.1,2.9 V.此外,器件不同发光孔径的有效发光面积比(实际发光面积与器件面积之比)分别为85%,87%,92%.与传统台面刻蚀micro-LED器件相比,离子注入隔离技术实现的micro-LED器件具有较低反的向漏电流密度、较高的光输出密度及有效发光面积比.
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