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基于器件模拟仿真,设计了一种1.5μm波长InGaAsP-InP晶体管激光器材料外延结构.其多量子阱有源区置于基区非对称波导中.仿真结果显示该外延结构能够获得较好的光场限制和侧向电流限制.对该材料MOCVD生长研究表明,基极重掺杂接触层中Zn2+扩散将导致量子阱严重退化.通过对其扩散过程的模拟仿真,采用平均掺杂浓度为1×1018cm-3的梯度掺杂,有效地抑制了Zn2+向量子阱区的扩散.所获得的外延材料在1.51μm呈现较强的PL峰值,具有卫星峰清晰的XRD谱.
Based on the device simulation, a 1.5μm wavelength InGaAsP-InP transistor laser material epitaxial structure is designed, and its MQW active region is placed in the asymmetric waveguide of the base region. The simulation results show that the epitaxial structure can obtain better optical field Limiting and lateral current limitation.MOCVD growth of this material shows that the diffusion of Zn2 + in the heavily doped contact layer of the base will lead to the serious degradation of the quantum well.Through the simulation of its diffusion process and the average doping concentration of 1 × 1018cm -3, effectively inhibiting the diffusion of Zn2 + into the quantum well region.The obtained epitaxial material exhibits a strong PL peak at 1.51μm and a clear XRD spectrum of the satellite peak.