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在室温条件下,采用反应磁控溅射方法,在硅衬底上制备氧化硅薄膜。研究了制备过程中不同氧气含量时氧化硅薄膜的生长速率、薄膜中的O/Si原子比例、表面粗糙度、薄膜的介电性能。发现薄膜的生长速率和介电常数随溅射时氧气含量的增加先增大后减小;薄膜中的O/Si原子比例随氧气含量的增加先增大,后来变化不明显,且很难达到或超过理想比例(2∶1);薄膜的粗糙度随氧气含量的增加先减小,后来基本保持不变。
At room temperature, reactive magnetron sputtering was used to prepare a silicon oxide film on a silicon substrate. The growth rate of silicon oxide films, the ratio of O / Si atoms in the films, the surface roughness and the dielectric properties of the films were investigated. It was found that the growth rate and permittivity of the films first increased and then decreased with the increase of the oxygen content during the sputtering process. The O / Si atomic ratio in the films first increased with the increase of oxygen content and then did not change obviously, Or exceed the ideal ratio (2: 1). The roughness of the film first decreases with the increase of oxygen content and then remains unchanged.