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采用两步退火方法获得了嵌埋于玻璃基体内CdSxSe1-x的半导体纳米晶体 ,其平均尺寸随退火时间的增加而增大 .从实验测量的室温吸收谱上看到 ,当纳米晶体的平均直径从 5.6 1nm减小到 4 .6 9nm时 ,其吸收边向高能方向移动了 0 .0 89eV .用有效质量近似模型计算了半导体纳米晶体的吸收边相对其体材料的移动 ,将理论计算与实验结果进行了比较 .
The average size of CdSxSe1-x semiconductor nanocrystals embedded in a glass matrix was obtained by a two-step annealing method, and the average size of CdSxSe1-x semiconductor nanocrystals was increased with the increase of annealing time.According to the experimentally measured absorption spectrum at room temperature, From 5.61nm to 4.96nm, the absorption edge shifts to 0.089eV toward the high energy direction. The effective mass approximation model is used to calculate the movement of the absorption edge of the semiconductor nanocrystal relative to its bulk material. Theoretical calculations and experiments The results were compared.