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提出了一种基于双反馈电流复用结构的新型CMOS超宽带(UWB)低噪声放大器(LNA),放大器工作在2～12 GHz的超宽带频段,详细分析了输入输出匹配、增益和噪声系数的性能。设计采用TSMC 0.18μm RF CMOS工艺,在1.4 V工作电压下,放大器的直流功耗约为13mW(包括缓冲级)。仿真结果表明,在2～12 GHz频带范围内,功率增益为15.6±1.4 dB,输入、输出回波损耗分别低于-10.4和-11.5 dB,噪声系数(NF)低于3 dB(最小值为1.96 dB),三阶交调点IIP3为-12 dBm,芯片版图面积约为712μm×614μm。
A novel ultra-wideband (UNAB) low noise amplifier (LNA) based on dual-feedback current multiplexing is proposed. The amplifier operates in the ultra-wideband frequency range of 2 to 12 GHz. The input-output matching, gain and noise figure performance. Designed with the TSMC 0.18μm RF CMOS process, the amplifier consumes approximately 13mW dc (including buffer stages) at a 1.4 V operating voltage. The simulation results show that the power gain is 15.6 ± 1.4 dB in the frequency range of 2 to 12 GHz, the input and output return loss are lower than -10.4 and -11.5 dB, respectively, and the noise figure (NF) is lower than 3 dB 1.96 dB), the third-order intercept point IIP3 is -12 dBm, and the chip layout area is about 712 μm × 614 μm.