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采用在真空蒸镀的Cu薄膜上喷雾热解InCl3和SC(NH2)2前驱液的方法,制备出CuInS2(CIS)薄膜。通过X射线衍射、紫外-可见分光光度计、扫描电子微镜和霍尔效应测试仪等仪器对薄膜进行了表征。研究表明,该方法制备出的CIS薄膜,表面均匀且无裂纹缺陷,薄膜内不存在CuxS、In2O3、In2S3等杂相。CIS薄膜为黄铜矿结构,可见光范围内吸收系数达到105cm-1。厚度506nm的CIS薄膜的禁带宽度为1.54eV。电阻率和载流子浓度分别达到10-1Ω·cm和1019cm-3,为p型半导体薄膜。
A CuInS2 (CIS) thin film was prepared by spray pyrolysis of InCl3 and SC (NH2) 2 precursors on a vacuum evaporated Cu film. The films were characterized by X-ray diffraction, UV-visible spectrophotometer, scanning electron micrograph and Hall effect tester. The results show that the CIS thin films prepared by this method have uniform surface and no crack defects, and do not contain CuxS, In2O3, In2S3 and other heterogeneous phases in the film. The CIS film has a chalcopyrite structure and has an absorption coefficient of 105 cm-1 in the visible range. The width of the forbidden band of the CIS film with a thickness of 506 nm is 1.54 eV. Resistivity and carrier concentration of 10-1Ω · cm and 1019cm-3, respectively, for the p-type semiconductor film.