论文部分内容阅读
将量子阱结构引入到单结GaAs太阳能电池中能够有效扩展吸收光谱.为了研究量子阱结构在GaAs太阳能电池中的作用机理,本文采用实验和理论的方法研究了InGaAs/GaAsP量子阱结构对电池量子效率的影响.实验结果表明,量子阱结构的窄带隙阱层材料将电池的吸收光谱从890 nm扩展到1000 nm.同时,量子阱结构的引入提高了680—890 nm波长范围内的量子效率,降低了波长在680 nm以下的量子效率.通过计算得到的量子阱结构和GaAs材料的光吸收系数,可以用来解释量子阱结构对太阳能电池量子效率的影响.
In order to study the mechanism of quantum well structure in GaAs solar cells, we introduce quantum well structures into single-junction GaAs solar cells to study the mechanism of quantum well structure in GaAs solar cells. The experimental and theoretical methods are used to study the effects of InGaAs / GaAsP quantum well structures on cell quantum Efficiency.The experimental results show that the quantum well structure of narrow bandgap layer material extends the absorption spectrum of the cell from 890 nm to 1000 nm.At the same time, the quantum well structure improves the quantum efficiency in the wavelength range of 680-890 nm, Reducing the quantum efficiency below 680 nm.The calculated quantum well structure and the light absorption coefficient of GaAs materials can be used to explain the quantum well structure on the quantum efficiency of solar cells.