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结型场效应晶体管(J—FET)的传统生产工艺是:在P型硅单晶衬底上进行薄层外延后,再进入制管工艺而生产出管芯的.在外延工序中,由于P型单晶片在高温条件下,P型杂质向外溢出污染管道,使获得纯净的N型外延层产生了困难;其次在汉有3μm的外延层厚度的方向上,白于浓度梯度的存在,获得一致性较好的外延层也是困难的.外延管道中的气流是紊流,由此造成外延层厚度的不均匀.在目前的条件下,生长仅3μ的外延层也有0.5μ的不均习值.这就造成了J-FET产中普遍成品率较低,成不高的缺点.
J-FET field-effect transistor (J-FET) of the traditional production process is: P-type silicon single-crystal substrate after epitaxial layer, and then into the tube manufacturing process to produce the die in the epitaxial process, the P Type monolithic wafer at the high temperature conditions, P-type impurities spill out of the contaminated pipe, so that to obtain a pure N-type epitaxial layer has difficulty; followed by Han in the direction of the epitaxial layer thickness of 3μm, the presence of white concentration gradient, access It is also difficult to have better conformal epitaxial layers.The turbulence in the flow in the epitaxial pipe contributes to the nonuniformity of the thickness of the epitaxial layer.Under the current conditions, the epitaxial layer grown only 3μ also has a 0.5μ nonuniformity This has led to the J-FET production yield generally lower yield, not high shortcomings.