论文部分内容阅读
表面沟道CCD是一种工作在非平衡深耗尽状态下的动态器件。信号在氧化层一半导体界面储存与转移。因此要求一稳定性好的高质量半导体界面。但实际的Si-SiO_2界面存在些缺陷,有的是材料固有的,有的是器件工艺引入的。主要有固定正电荷、可动电荷、界面态、电离陷阱等四种类型。它们的存在对器件的转移特性和频率特性有着重要的影响。另外,器件表面的少子寿命也是影响器件性能的重要参数。C-V和C-T测量可直接用来监测工艺,
The surface channel CCD is a dynamic device that operates in a non-equilibrium, deep depletion state. The signal is stored and transferred at the oxide-semiconductor interface. Therefore, a stable, high-quality semiconductor interface is demanded. However, the actual Si-SiO 2 interface has some defects, some are inherent to the material, and some are introduced by the device process. There are four main types of fixed positive charge, movable charge, interface state, ionization trap. Their presence has a major impact on the transfer and frequency characteristics of the device. In addition, the minority carrier life on the surface of the device is also an important parameter affecting device performance. C-V and C-T measurements can be used directly to monitor the process,