论文部分内容阅读
利用脉冲激光沉积(PLD)技术,在Ar环境下于Si基片上制备出Ge纳米薄膜。用X射线衍射(XRD)仪和原子力显微镜(AFM)观测了薄膜的微观结构和形貌,分析了它们随激光能量密度和衬底温度的变化情况。结果表明:Ge薄膜在室温下即可以结晶,其平均晶粒尺寸随脉冲激光能量密度的增大而增大。当脉冲激光能量密度为0.94 J/cm2时,所制备的薄膜由约13 nm的颗粒组成;当脉冲激光能量密度增大为1.31 J/cm2时,颗粒的平均尺寸增大为56 nm,且薄膜表面变得比较均匀。此外,当衬底温度从室温升到450℃过程中,晶粒平均尺寸随温度升高而增大。在实验基础上,对薄膜的生长机理进行了分析。
The Ge nanostructured thin films were fabricated on Si substrate by using pulsed laser deposition (PLD). The microstructure and morphology of the films were observed by X-ray diffraction (XRD) and atomic force microscope (AFM), and their changes with laser energy density and substrate temperature were analyzed. The results show that the Ge film can crystallize at room temperature, and its average grain size increases with the increase of pulse laser energy density. When the pulse laser energy density is 0.94 J / cm2, the prepared film is composed of about 13 nm particles; when the pulsed laser energy density is increased to 1.31 J / cm2, the average particle size increases to 56 nm, and the film The surface becomes more uniform. In addition, the average grain size increases with increasing temperature when the substrate temperature increases from room temperature to 450 ℃. Based on the experiment, the growth mechanism of the film was analyzed.