用电化学沉积方法制备出了Nd掺杂的ZnO薄膜,并研究其结构和光学性质。X射线衍射谱的结果表明Nd~(3+)替代Zn2+进入到ZnO晶格中,并没有引起杂相的出现。吸收谱的分析表明,随着掺杂浓度的增大,吸收峰向短波长方向移动,即发生蓝移。光致发光谱的结果表明随着Nd~(3+)掺杂浓度的增大,紫外峰强度减小,可见光部分强度增大了。 Nd-doped ZnO thin films were prepared by electrochemical deposition and their structures and optical properties were studied. X-ray diffraction results show that Nd ~ (3+) replaces Zn2 + into the lattice of ZnO, and does not cause heterophase. Absorption spectrum analysis shows that with the doping concentration increases, the absorption peak to the short wavelength direction of movement, that is blue shift. The results of photoluminescence spectroscopy showed that with the increase of Nd ~ (3 +) doping concentration, the UV intensity decreased and the intensity of visible light increased.